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1/11 october 2004 new datasheet according to pcn dsg-tra/04/532 std17nf03l STD17NF03L-1 n-channel 30v - 0.038 ? - 17a - dpak/ipak stripfet?ii mosfet table 1: general features typical r ds (on) = 0.038 ? exceptional dv/dt capability low gate charge at 100c application oriented characterization 100% avalanche tested description this mosfet is the latest development of stmi- croelectronics unique ?single feature size ?? strip-based process. the resulting transistor shows extremely high packing density for low on- resistance, rugged avalance characteristics and less critical alignment steps therefore a remark- able manufacturing reproducibility. applications dc-dc & dc-ac converters motor control, audio amplifiers high current, high speed switching solenoid and relay drivers automotive environment table 2: order codes figure 1: package figure 2: internal schematic diagram type v dss r ds(on) i d std17nf03l STD17NF03L-1 30 v 30 v < 0.05 ? < 0.05 ? 17 a 17 a 1 3 3 2 1 dpak ipak sales type marking package packaging std17nf03lt4 d17nf03l@ dpak tape & reel STD17NF03L-1 d17nf03l@ ipak tube rev. 3
std17nf03l - STD17NF03L-1 2/11 table 3: absolute maximum ratings (1) i sd 17a, di/dt 300a/s, v dd v (br)dss , t j t jmax. . (2) starting t j =25 c, i d =8.5a, v dd =15v ( ) pulse width limited by safe operating area table 4: thermal data electrical characteristics (t case =25 c unless otherwise specified) table 5: off table 6: on symbol parameter value unit v ds drain-source voltage (v gs = 0) 30 v v dgr drain-gate voltage (r gs = 20 k ? ) 30 v v gs gate- source voltage 16 v i d drain current (continuous) at t c = 25 c 17 a i d drain current (continuous) at t c = 100 c 12 a i dm ( ) drain current (pulsed) 68 a p tot total dissipation at t c = 25 c 30 w derating factor 0.2 w/ c dv/dt (1) peak diode recovery voltage slope 7 v/ns e as (2) single pulse avalanche energy 200 mj t stg storage temperature ? 55 to 175 c t j operating junction temperature 175 c rthj-case thermal resistance junction-case max 5.0 c/w rthj-amb thermal resistance junction-ambient max 100 c/w t l maximum lead temperature for soldering purpose 275 c symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 250 a, v gs = 0 30 v i dss zero gate voltage drain current (v gs = 0) v ds = max rating 1a v ds = max rating, t c = 125 c 10 a i gss gate-body leakage current (v ds = 0) v gs = 16v 100 na symbol parameter test conditions min. typ. max. unit v gs(th) gate threshold voltage v ds = v gs , i d = 250a 11.52.2v r ds(on) static drain-source on resistance v gs = 10v, i d = 8.5 a v gs = 5 v, i d = 8.5 a 0.038 0.045 0.05 0.06 ? ?
3/11 std17nf03l - STD17NF03L-1 electrical characteristics (continued) table 7: dynamic table 8: switching on table 9: switching off table 10: source drain diode (1) pulsed: pulse duration = 300 s, duty cycle 1.5 %. (2) pulse width limited by safe operating area. symbol parameter test conditions min. typ. max. unit g fs (1) forward transconductance v ds > i d(on) x r ds(on)max, i d =8.5a 12 s c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds = 25v, f = 1 mhz, v gs = 0 320 155 28 pf pf pf symbol parameter test conditions min. typ. max. unit t d(on) t r turn-on delay time rise time v dd = 15v, i d = 8.5a r g =4.7 ? v gs = 5v (see figure 16) 11 100 ns ns q g q gs q gd total gate charge gate-source charge gate-drain charge v dd = 24v, i d = 17a, v gs = 5v 4.8 2.25 1.7 6.5 nc nc nc symbol parameter test conditions min. typ. max. unit t d(off) t f turn-off-delay time fall time v dd = 15v, i d = 8.5a, r g =4.7 ?, v gs = 5v (see figure 16) 25 22 ns ns t r(off) t f t c off-voltage rise time fall time cross-over time vclamp =24v, i d =17a r g =4.7 ?, v gs = 5v (see figure 17) 22 55 75 ns ns ns symbol parameter test conditions min. typ. max. unit i sd source-drain current 22 a i sdm (2) source-drain current (pulsed) 88 a v sd (1) forward on voltage i sd = 17a, v gs = 0 1.5 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 17a, di/dt = 100a/s, v dd = 15v, t j = 150 c (see test circuit, figure 5) 28 18 1.3 ns nc a
std17nf03l - STD17NF03L-1 4/11 figure 3: safe operating area figure 4: output characteristics figure 5: transconductance figure 6: thermal impedance figure 7: transfer characteristics figure 8: static drain-source on resistance
5/11 std17nf03l - STD17NF03L-1 figure 9: gate charge vs gate-source voltage figure 10: normalized gate thereshold volt- age vs temperature figure 11: source-drain diode forward char- acteristics figure 12: capacitance variations figure 13: normalized on resistance vs tem- perature figure 14: normalized breakdown voltage vs temperature
std17nf03l - STD17NF03L-1 6/11 figure 15: unclamped inductive load test cir- cuit figure 16: switching times test circuit for resistive load figure 17: test circuit for inductive load switching and diode recovery times figure 18: unclamped inductive wafeform figure 19: gate charge test circuit
7/11 std17nf03l - STD17NF03L-1 dim. mm inch min. typ. max. min. typ. max. a 2.20 2.40 0.087 0.094 a1 0.90 1.10 0.035 0.043 a2 0.03 0.23 0.001 0.009 b 0.64 0.90 0.025 0.035 b2 5.20 5.40 0.204 0.213 c 0.45 0.60 0.018 0.024 c2 0.48 0.60 0.019 0.024 d 6.00 6.20 0.236 0.244 e 6.40 6.60 0.252 0.260 g 4.40 4.60 0.173 0.181 h 9.35 10.10 0.368 0.398 l2 0.8 0.031 l4 0.60 1.00 0.024 0.039 v2 0 o 8 o 0 o 0 o p032p_b to-252 (dpak) mechanical data
std17nf03l - STD17NF03L-1 8/11 dim. mm inch min. typ. max. min. typ. max. a 2.2 2.4 0.086 0.094 a1 0.9 1.1 0.035 0.043 a3 0.7 1.3 0.027 0.051 b 0.64 0.9 0.025 0.031 b2 5.2 5.4 0.204 0.212 b3 0.85 0.033 b5 0.3 0.012 b6 0.95 0.037 c 0.45 0.6 0.017 0.023 c2 0.48 0.6 0.019 0.023 d 6 6.2 0.236 0.244 e 6.4 6.6 0.252 0.260 g 4.4 4.6 0.173 0.181 h 15.9 16.3 0.626 0.641 l 9 9.4 0.354 0.370 l1 0.8 1.2 0.031 0.047 l2 0.8 1 0.031 0.039 a c2 c a3 h a1 d l l2 l1 1 3 = = b3 b b6 b2 e g = = = = b5 2 to-251 (ipak) mechanical data 0068771-e
9/11 std17nf03l - STD17NF03L-1 tape and reel shipment (suffix ?t4?)* tube shipment (no suffix)* dpak footprint * on sales type dim. mm inch min. max. min. max. a 330 12.992 b 1.5 0.059 c 12.8 13.2 0.504 0.520 d 20.2 0.795 g 16.4 18.4 0.645 0.724 n 50 1.968 t 22.4 0.881 base qty bulk qty 2500 2500 reel mechanical data dim. mm inch min. max. min. max. a0 6.8 7 0.267 0.275 b0 10.4 10.6 0.409 0.417 b1 12.1 0.476 d 1.5 1.6 0.059 0.063 d1 1.5 0.059 e 1.65 1.85 0.065 0.073 f 7.4 7.6 0.291 0.299 k0 2.55 2.75 0.100 0.108 p0 3.9 4.1 0.153 0.161 p1 7.9 8.1 0.311 0.319 p2 1.9 2.1 0.075 0.082 r 40 1.574 w 15.7 16.3 0.618 0.641 tape mechanical data all dimensions are in millimeters all dimensions are in millimeters
std17nf03l - STD17NF03L-1 10/11 table 11: revision history date revision description of changes 08-june-2004 2 new stylesheet. datasheet according to pcn dsg-tra/04/532 19-oct-2004 3 modified value in title
11/11 std17nf03l - STD17NF03L-1 information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsibility for the co nsequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specifications mentioned in this publicati on are subject to change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectronics prod ucts are not authorized for use as critical components in life support devices or systems without express written approval of stmicroelectro nics. the st logo is a registered trademark of stmicroelectronics all other names are the property of their respective owners ? 2004 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - singapore - spain - sweden - switzerland - united kingdom - united states of america

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